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                                                                                                        KTC3265
                                                                                                  SOT-23 Transistor(NPN)

                                                                                                          SOT-23
                                           1. BASE
                                           2. EMITTER
                                           3. COLLECTOR




 Features

        High DC current gain: hFE=100-320
        Complementary to KTA1298




                                                                                            Dimensions in inches and (millimeters)


MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                 Parameter                           Value                  Units
 VCBO              Collector-Base Voltage                            35                    V
 VCEO              Collector-Emitter Voltage                         30                    V
 VEBO              Emitter-Base Voltage                              5                     V
 IC                Collector Current -Continuous                    800                   mA
 PC                Collector Power Dissipation                      200                   mW
 Tj                Junction Temperature                             150                    
 Tstg              Storage Temperature                             -55-150                 

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                               Symbol           Test   conditions           MIN       TYP    MAX      UNIT

 Collector-base breakdown voltage                    V(BR)CBO       IC= 100A, IE=0                 35                         V

 Collector-emitter breakdown voltage                 V(BR)CEO       IC= 10mA, IB=0                 30                         V

 Emitter-base breakdown voltage                      V(BR)EBO       IE=100A, IC=0                   5                         V

 Collector cut-off current                              ICBO        VCB=30 V, IE=0                                  0.1       A
 Collector cut-off current                              IEBO        VEB=5 V, IC=0                                   0.1       A
 DC current gain                                        hFE         VCE=1V, IC= 100mA              100              320

 Collector-emitter saturation voltage                VCE(sat)       IC=500mA, IB=20mA                                0.5      V

 base-emitter voltage                                   V BE        VCE=1V,IC=10mA                 0.5              0.8       V

                                                                    VCE=5V, IC=10mA
 Transition frequency                                    fT                                                 120              MHz
                                                                    f=100MHz
 Collector output capacitance                           Cob         VCB=10V,IE=0,f=1MHZ                     13                pF

CLASSIFICATION OF            hFE
Rank                                                           O                                           Y
Range                                                   100-200                                          160-320
Marking                                                       EO                                           EY
                             KTC3265
                          SOT-23 Transistor(NPN)


Typical Characteristics

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