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                                                                                                         KTC4075
                                                                                                    SOT-23 Transistor(NPN)
                                                                                                              SOT-23
                                                1. BASE
                                                2. EMITTER
                                                3. COLLECTOR




Features
          Excellent hFE linearity
          High hFE
          Low Noise
          Complementary to KTA2014

                                                                                               Dimensions in inches and (millimeters)

MAXIMUM RATINGS(TA=25 unless otherwise noted)
        Symbol                                      Parameter                                          Value                 Units
VCBO                   Collector-Base Voltage                                                            60                     V
VCEO                   Collector-Emitter Voltage                                                         50                     V
VEBO                   Emitter-Base Voltage                                                              5                      V
IC                     Collector Current -Continuous                                                    150                     mA
PC                     Collector Power Dissipation                                                      100                    mW
Tj                     Junction Temperature                                                             150                     
Tstg                   Storage Temperature                                                            -55-150                   

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                           Symbol                   Test     conditions               MIN      MAX         UNIT

     Collector-base breakdown voltage                V(BR)CBO        IC = 100A, IE=0                            60                    V
     Collector-emitter breakdown voltage             V(BR)CEO        IC = 1mA, IB=0                             50                    V
     Emitter-base breakdown voltage                  V(BR)EBO        IE= 100A, IC=0                              5                    V
     Collector cut-off current                            ICBO       VCB=60V, IE=0                                        0.1        A
     Emitter cut-off current                              IEBO       VEB=5V, IC=0                                         0.1        A
     DC current gain                                       hFE       VCE= 6V, IC=2mA                            70        700
     Collector-emitter saturation voltage             VCEsat         IC=100mA, IB= 10mA                                  0.25         V
     Transition frequency                                  fT        VCE=10V, IC= 1mA                           80                   MHz
     Collector output capacitance                         Cob        VCE=10V, IE=0, f=1MHz                                3.5        pF
     Noise figure                                         NF         VCE=6V,IE=0.1mA, f=1KHz,RG=10K                       10         dB


CLASSIFICATION OF hFE
       Rank                    O                                Y                         GR                            BL

       Range             70~140                           120~240                       200~400                       350~700

       Marking               LO                                 LY                        LGR                          LBL
                             KTC4075
                          SOT-23 Transistor(NPN)


Typical Characteristics
   KTC4075
SOT-23 Transistor(NPN)

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