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KTC4379
SOT-89 Transistor(NPN)
1. BASE
SOT-89
1 2. COLLECTOR
4.6
2 3. EMITTER 1.6
4.4
B
1.8
1.4 1.4
3
Features 2.6 4.25
2.4 3.75
Low saturation voltage 0.8
MIN
High speed switching time 0.53
0.44 0.48 0.40
0.13 B 2x)
Complementary to KTA1666 0.37 0.35
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=2V, IC=500mA 70 240
DC current gain
hFE(2) VCE=2V, IC=1.5A 40
Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V
Transition frequency fT VCE=2V, IC=500mA 120 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF
Turn on Time ton 0.1
Switching Time Storage Time tstg VCC=30V, IC=1A, IB1=-IB2=-0.05A 1.0 s
Fall Time tf 0.1
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
Marking UO UY
KTC4379
SOT-89 Transistor(NPN)
Typical Characteristics
KTC4379
SOT-89 Transistor(NPN)
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