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                                                                                                         KSA643(PNP)
                                                                                                               TO-92 Transistors

                                                                                                                     TO-92
                                                                       1.      EMITTER

                                                                          2.   BASE

                                                                          3. COLLECTOR




Features
        Collector dissipation
        Complement to KSD261


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                     Parameter                        Value                Units
VCBO           Collector-Base Voltage                         -40                     V
VCEO           Collector-Emitter Voltage                      -20                     V
VEBO           Emitter-Base Voltage                            -5                     V              Dimensions in inches and (millimeters)
IC             Collector Current -Continuous                -500                  mA
PC             Collector Power Dissipation                  500                   mW
TJ             Junction Temperature                         150                       
Tstg           Storage Temperature                       -55-150                      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                  Parameter                        Symbol             Test       conditions                  MIN   TYP    MAX      UNIT

     Collector-base breakdown voltage              V(BR)CBO         IC= -100uA,IE=0                          -40                    V

     Collector-emitter breakdown voltage           V(BR)CEO         IC= -10mA ,           IB=0               -20                    V

     Emitter-base breakdown voltage                V(BR)EBO         IE= -10uA, IC=0                          -5                     V

     Collector cut-off current                       ICBO           VCB= -25 V , IE=0                                     -0.2     uA

     Emitter cut-off current                         IEBO           VEB= -3 V ,           IC=0                            -0.2     uA

     DC current gain                                 hFE*           VCE= -1 V,        IC= -100mA             40           400

     Collector-emitter saturation voltage          VCE(sat)*        IC= -500mA, IB=- 50mA                                 -0.4      V

     Base-emitter saturation voltage               VBE(sat)*        IC= -500mA, IB=- 50mA                                 -1.3      V
* PULSE TEST




CLASSIFICATION OF hFE
       Rank                                 R                         O                              Y                     G

       Range                               40-80                    70-140                         120-240               200-400
                          KSA643(PNP)
                           TO-92 Transistors


Typical Characteristics

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