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LB123T(NPN)
TO-126 Transistor
TO-126
1. EMITTER 2.500
7.400
7.800 1.100 2.900
1.500
2. COLLECTOR
3.900
3.000
4.100
3. BASE 3.200
3 10.60 0 0.000
2 11.00 0 0.300
Features 1
High voltage, high speed power switch 2.100
2.300
Switch regulators
1.170
PWM inverter and Motor controls 1.370
15.30 0
Solenoid and relay drivers 15.70 0
Deflection circuits
MAXIMUM RATINGS* TA=25 unless otherwise noted
0.660
Symbol Parameter Value Units 0.860
0.450
VCBO Collector-Base Voltage 600 v 0.600
2.290 TYP
4.480
VCEO Collector-Emitter Voltage 400 V 4.680
VEBO Emitter-Base Voltage 8 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 1.25 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 8 V
Collector cut-off current ICBO VCB=600V, IE=0 10 A
Emitter cut-off current IEBO VEB=8V, IC=0 10 A
hFE(1) VCE=5V, IC=0.3A 10 50
DC current gain * hFE(2) VCE=5V, IC=0.5A 10
hFE(3) VCE=5V, IC=1A 6
IC=100mA, IB=10mA 0.8 V
Collector-emitter saturation voltage* VCE(sat)
IC=300mA, IB=30mA 0.9 V
IC=100mA, IB=10mA 1.2 V
Base-emitter saturation voltage* VBE(sat)
IC=300mA, IB=30mA 1.8 V
*pulse test: pulse width380s, Duty cycle2%.
CLASSIFICATION OF hFE(1)
Rank B1 B2 B3 B4 B5 B6 B7 B8
Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
Marking
LB123T(NPN)
TO-126 Transistor
Typical Characteristics
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