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                                                                                            PZTA14
                                                                                      SOT-223 Transistor(NPN)

                                              1. BASE                                            SOT-223
                                              2. COLLECTOR
                          1
                                              3. EMITTER



Features
       High current (max. 500 mA)
       Low voltage (max. 30 V).
       Pre-amplifiers requiring high input impedance.




MAXIMUM RATINGS (TA=25 unless otherwise noted)                                    Dimensions in inches and (millimeters)

       Symbol                                    Parameter                                Value              Units
VCBO                 Collector-Base Voltage                                                30                  V
VCEO                 Collector-Emitter Voltage                                             30                  V
VEBO                 Emitter-Base Voltage                                                  10                  V
IC                   Collector Current -Continuous                                         500                mA
PC                   Collector Power Dissipation                                            2                  W
Tj                   Junction Temperature                                                  150                 
Tstg                 Storage Temperature                                                 -65-150               

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                          Symbol       Test   conditions             MIN      TYP    MAX      UNIT

 Collector-base breakdown voltage                V(BR)CBO   Ic=100A,IE=0                        30                    V

 Collector-emitter breakdown voltage             VCE(SUS)   Ic=100uA,IB=0                       30                    V

 Emitter-base breakdown voltage                  V(BR)EBO   IE=100A,IC=0                        10                    V

 Collector cut-off current                         ICBO     VCB=30V,IE=0                                     0.1     A

 base cut-off current                              ICEO     VEB=10V,IC=0                                     0.1     A

                                                  hFE(1)    VCE=5.0V,IC=10mA               10000
 DC current gain
                                                  hFE(2)    VCE=5.0V,IC=100mA              20000

 Collector-emitter saturation voltage            VCE(sat)   IC=100mA,IB=0.1mA                                1.5      V

 Base-emitter voltage                              VBE      VCE=5V,Ic=100mA                                   2       V

 Transition frequency                               fT      VCE=5V,IC=10mA,f=100MHz         125                      MHz
                                PZTA14
                          SOT-223 Transistor(NPN)


Typical Characteristics

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