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                                                                                                        S8050
                                                                                            SOT-23 Transistor(NPN)
                                                                                                  SOT-23
                                            1. BASE
                                            2. EMITTER
                                            3. COLLECTOR




Features
        Complimentary to S8550
        Collector Current: IC=0.5A


MARKING: J3Y
                                                                                        Dimensions in inches and (millimeters)


MAXIMUM RATINGS (TA=25 unless otherwise noted)
        Symbol                                 Parameter                                      Value                Units
 VCBO              Collector-Base Voltage                                                         40                    V
 VCEO              Collector-Emitter Voltage                                                      25                    V
 VEBO              Emitter-Base Voltage                                                            5                    V
 IC                Collector Current -Continuous                                                  0.5                   A
 PC                Collector Dissipation                                                          0.3                   W
 Tj                Junction Temperature                                                           150                   
 Tstg              Storage Temperature                                                       -55-150                    
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                              Symbol       Test      conditions       MIN             TYP   MAX       UNIT

 Collector-base breakdown voltage                  V(BR)CBO    IC= 100A, IE=0                40                             V

 Collector-emitter breakdown voltage               V(BR)CEO    IC=1mA, IB=0                  25                             V

 Emitter-base breakdown voltage                    V(BR)EBO    IE=100A, IC=0                  5                             V

 Collector cut-off current                            ICBO     VCB=40 V , IE=0                                    0.1       A

 Collector cut-off current                            ICEO     VCB=20V ,     IE=0                                 0.1       A

 Emitter cut-off current                              IEBO     VEB= 5V ,     IC=0                                 0.1       A

                                                      HFE(1)   VCE=1V,     IC= 50mA          120                  350
 DC current gain
                                                      HFE(2)   VCE=1V,     IC= 500mA         50

 Collector-emitter saturation voltage              VCE(sat)    IC=500 mA, IB= 50mA                                0.6       V

 Base-emitter saturation voltage                   VBE(sat)    IC=500 mA, IB= 50mA                                1.2       V

                                                               VCE=6V,     IC= 20mA
 Transition frequency                                 fT                                     150                            MHz
                                                               f=30MHz
CLASSIFICATION OF            hFE(1)
 Rank                                          L                                                        H
 Range                                      120-200                                               200-350
                                S8050
                          SOT-23 Transistor(NPN)


Typical Characteristics

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