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                                                                                                      S9014
                                                                                         SOT-23 Transistor(NPN)
                                                                                                       SOT-23
                                          1. BASE
                                          2. EMITTER
                                          3. COLLECTOR




Features
      Complementary to S9015

MARKING: J6



                                                                                      Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                                 Parameter                                    Value                  Units
 VCBO              Collector-Base Voltage                                                        50                     V
 VCEO              Collector-Emitter Voltage                                                     45                     V
 VEBO              Emitter-Base Voltage                                                          5                      V
 IC                Collector Current -Continuous                                                0.1                     A
 PC                Collector Power Dissipation                                                  0.2                    W
 Tj                Junction Temperature                                                         150                    
 Tstg              Storage Temperature                                                     -55-150                     
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                              Symbol      Test   conditions          MIN          TYP      MAX        UNIT

 Collector-base breakdown voltage                   V(BR)CBO    IC= 100A,     IE=0         50                                V

 Collector-emitter breakdown voltage                V(BR)CEO    IC= 0.1mA, IB=0             45                               V

 Emitter-base breakdown voltage                     V(BR)EBO    IE=100A, IC=0               5                                V

 Collector cut-off current                             ICBO     VCB=50 V , IE=0                                  0.1        A

 Collector cut-off current                             ICEO     VCE=35V ,    IB=0                                0.1        A

 Emitter cut-off current                               IEBO     VEB= 3V ,     IC=0                               0.1        A

 DC current gain                                       hFE      VCE=5V,     IC= 1mA        200                   1000

 Collector-emitter saturation voltage               VCE(sat)    IC=100 mA, IB= 5mA                               0.3         V

 Base-emitter saturation voltage                    VBE(sat)    IC=100 mA, IB= 5mA                                1          V

                                                                VCE=5V, IC= 10mA
 Transition frequency                                      fT                              150                              MHz
                                                                f=30MHz

  CLASSIFICATION OF           hFE
 Rank                                                  L                                                 H
 Range                                         200-450                                                450-1000
                                S9014
                          SOT-23 Transistor(NPN)



Typical Characteristics

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