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S9018(NPN)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 4 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 0.4 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 25 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V
Collector cut-off current ICBO VCB= 20V, IE=0 0.1 A
Collector cut-off current ICEO VCE=15V,IB=0 0.1 A
Emitter cut-off current IEBO VEB=3V, IC=0 0.1 A
DC current gain hFE VCE=5V, IC= 1mA 28 270
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V
VCE=5 V, IC=5mA
Transition frequency fT f =400MHz
600 MHz
CLASSIFICATION OF hFE
Rank D E F G H I J
Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270
S9018(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
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