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                                                                                                      S9012
                                                                                               SOT-23 Transistor(PNP)
                                                                                                     SOT-23

                                          1. BASE
                                          2. EMITTER
                                          3. COLLECTOR




Features
      Complementary to S9013
      Excellent hFE linearity

MARKING: 2T1
                                                                                        Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
        Symbol                      Parameter                           Value          Units
 VCBO              Collector-Base Voltage                                 -40           V
 VCEO              Collector-Emitter Voltage                              -25           V
 VEBO              Emitter-Base Voltage                                    -5           V
 IC                Collector Current -Continuous                          -500         mA
 PC                Collector Power Dissipation                            300          mW
 Tj                Junction Temperature                                   150           
 Tstg              Storage Temperature                                  -55-150         
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
 Parameter                                          Symbol       Test     conditions           MIN      TYP      MAX        UNIT

 Collector-base breakdown voltage                   V(BR)CBO   IC= -100A, IE=0                  -40                         V

 Collector-emitter breakdown voltage                V(BR)CEO   IC= -1mA, IB=0                   -25                         V

 Emitter-base breakdown voltage                     V(BR)EBO   IE=-100A, IC=0                    -5                         V

 Collector cut-off current                          ICBO       VCB=-40V, IE=0                                        -0.1   A

 Collector cut-off current                          ICEO       VCE=-20V, IB=0                                        -0.1   A

 Emitter cut-off current                            IEBO       VEB= -5V, IC=0                                        -0.1   A

 DC current gain                                    hFE        VCE=-1V, IC= -50mA               120                  400

 Collector-emitter saturation voltage               VCE(sat)   IC=-500mA, IB= -50mA                                  -0.6   V

 Base-emitter saturation voltage                    VBE(sat)   IC=-500mA, IB= -50mA                                  -1.2   V

                                                               VCE=-6V,    IC= -20mA
 Transition frequency                               fT                                          150                         MHz
                                                               f=30MHz

 Collector output capacitance                       Cob        VCB=-10V,IE=0,f=1MHz                                   5      pF

CLASSIFICATION OF hFE
           Rank                           L                                      H                               J
          Range                      120-200                               200-350                            300-400
                                S9012
                          SOT-23 Transistor(PNP)


Typical Characteristics

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