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                                                                                                    TIP111
                                                                                       TO-220 Darlington Transistor (NPN)


                                             1. BASE                                                     TO-220
                                             2. COLLECTOR

                                             3. EMITTER

                                       3
                                   2
Features                       1

      High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
      Low Collector-Emitter Saturation Voltage
      Industrial Use

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                   Parameter                         Value          Units
 VCBO        Collector-Base Voltage                          80              V         Dimensions in inches and (millimeters)
 VCEO        Collector-Emitter Voltage                       80              V
 VEBO        Emitter-Base Voltage                            5               V
 IC          Collector Current -Continuous                   2               A
 PC          Collector Dissipation                           2               W
 TJ          Junction Temperature                           150              
 Tstg        Storage Temperature                        -55 to +150          

ELECTRICAL CHARACTERISTICS (Tamb=25                                     unless     otherwise   specified)
           Parameter                         Symbol              Test     conditions                MIN     TYP     MAX     UNIT

Collector-base breakdown voltage             V(BR)CBO        IC=10mA,IE=0                           80                          V

                                                    (sus)
Collector-emitter sustaining       voltage   VCEO            IC=30mA,IB=0                           80                          V

Emitter-base breakdown voltage               V(BR)EBO        IE=10mA,IC=0                            5                          V

Collector cut-off current                      ICEO          VCE=40V,IB=0                                            2          mA

Collector cut-off current                      ICBO          VCB=80V,IE=0                                            1          mA

Emitter cut-off current                        IEBO          VEB=5V,IC=0                                             2          mA

                                               hFE(1)        VCE=4V,IC=1A                          1000
DC current gain
                                               hFE(2)        VCE=4V,IC=2A                           500

Collector-emitter saturation voltage          VCE(sat)       IC=2A,IB=8mA                                            2.5        V

Base-emitter voltage                           VBE           VCE=4V,IC=2A                                            2.8        V

Collector output capacitance                    Cob          VCB=10V,IE=0,f=0.1MHz                                  100         pF
                                    TIP111
                          TO-220 Darlington Transistor (NPN)

Typical Characteristics

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