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                                                                                                      2N4401(NPN)
                                                                                                     TO-92 Bipolar Transistors


                                                                       1. EMITTER                               TO-92
                                                                       2. BASE

                                                                       3. COLLECTOR


Features
       Power dissipation

 MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol       Parameter                                   Value          Units
VCBO         Collector-Base Voltage                       60              V
VCEO         Collector-Emitter Voltage                    40              V
VEBO         Emitter-Base Voltage                         6               V
IC           Collector Current -Continuous                600            mA
PC           Collector Power dissipation                 0.625            W
TJ           Junction Temperature                         150             
                                                                                              Dimensions in inches and (millimeters)
Tstg         Storage Temperature                       -55to +150         
RJA          Thermal Resistance, junction to Ambient      357          /mW


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                  Parameter                                Symbol                Test   conditions        MIN    MAX    UNIT
     Collector-base breakdown voltage                      V(BR)CBO       IC=100A , IE=0                   60            V
     Collector-emitter breakdown voltage                   V(BR)CEO       IC= 1mA , IB=0                   40            V
     Emitter-base breakdown voltage                        V(BR)EBO       IE=100A, IC=0                    6             V
     Collector cut-off current                                 ICBO       VCB=35V, IE=0                           0.1    A
     Emitter cut-off current                                   IEBO       VEB=5V, IC=0                            0.1    A
                                                              hFE(1)      VCE=1V, IC= 0.1mA                20
                                                              hFE(2)      VCE=1V, IC=1mA                   40
     DC current gain                                          hFE(3)      VCE=1V, IC= 10mA                 80
                                                              hFE(4)      VCE=1V, IC=150mA                100    300
                                                              hFE(5)      VCE=2V, IC= 500mA                40
                                                           VCE(sat)1      IC=150 mA, IB=15mA                      0.4    V
     Collector-emitter saturation voltage
                                                           VCE(sat)2      IC=500 mA, IB=50mA                     0.75    V
                                                           VBE(sat)1      IC=150 mA, IB=15mA                     0.95    V
     Base-emitter saturation voltage
                                                           VBE(sat)2      IC=500 mA, IB=50mA                      1.2    V
                                                                          VCE= 10V, IC= 20mA,
     Transition frequency                                       fT                                        250           MHz
                                                                          f=100MHz
                                                                          VCB=10V, IE= 0,
     Output Capacitance                                        Cob                                                6.5    pF
                                                                          f=100KHz
     Delay time                                                 td                                                15     nS
                                                                          VCC=30V, VBE(OFF)=2V
     Rise time                                                  tr                                                20     nS
                                                                          IC=150mA, IB1=15mA
     Storage time                                               tS                                               225     nS
                                                                          VCC=30V, IC=150mA
     Fall time                                                  tf                                                30     nS
                                                                          IB1=-IB2= 15mA
                           2N4401(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristics

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