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                                                                                          2N4403(PNP)
                                                                                        TO-92 Bipolar Transistors


                                                               1.   EMITTER
                                                                                                      TO-92
                                                               2.   BASE

                                                               3. COLLECTOR



Features
    Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                      Parameter                        Value            Units
 VCBO        Collector-Base Voltage                           -40              V
 VCEO        Collector-Emitter Voltage                        -40              V
 VEBO        Emitter-Base Voltage                             -5               V
   IC        Collector Current -Continuous                   -600             mA
  PC         Collector Power dissipation                     0.625             W
  TJ         Junction Temperature                             150                     Dimensions in inches and (millimeters)
  Tstg       Storage Temperature                          -55 to +150          
 RJA         Thermal Resistance, junction to Ambient          357             /mW


ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

             Parameter                       Symbol        Test      conditions                MIN     TYP     MAX     UNIT

Collector-base breakdown voltage             V(BR)CBO    IC=-100A,IE=0                         -40                      V
Collector-emitter breakdown voltage          V(BR)CEO    IC=-1mA,IB=0                          -40                      V
Emitter-base breakdown voltage               V(BR)EBO    IE=-100A,IC=0                          -5                      V
Collector cut-off current                      ICBO      VCB=-35V,IE=0                                         -100     nA
Emitter cut-off current                        IEBO      VEB=-5V,IC=0                                          -100     nA
                                              hFE(1)     VCE=-1V,IC=-0.1mA                     30
                                              hFE(2)     VCE=-1V,IC=-1mA                       60
DC current gain                               hFE(3)     VCE=-1V,IC=-10mA                      100
                                              hFE(4)     VCE=-1V,IC=-150mA                     100             300
                                              hFE(5)     VCE=-2V,IC=-500mA                     20
                                             VCE(sat)1   IC=-150mA,IB=-15mA                                    -0.4     V
Collector-emitter saturation voltage
                                             VCE(sat)2   IC=-500mA,IB=-50mA                                    -0.75    V
                                             VBE(sat)1   IC=-150mA,IB=-15mA                   -0.75            -0.95    V
Base-emitter saturation voltage
                                             VBE(sat)2   IC=-500mA,IB=-50mA                                    -1.3     V
Transition frequency                            fT       VCE=-10V,IC=-20mA,f=100MHz            200                     MHz
Collector capacitance                          Cob       VCB=-10V,IE=0,f=100KHz                                 8.5     pF
Delay time                                      td                                                              15      nS
Rise time                                       tr       VCC=-30V, IC=-150mA                                    20      nS
Storage time                                    tS       IB1=- IB2=-15mA                                       225      nS
Fall time                                       tf                                                              30      nS
                           2N4403(NPN)
                          TO-92 Bipolar Transistors

Typical Characteristics

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