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                                                                                                2N5401(PNP)
                                                                                           TO-92 Bipolar Transistors

                                                                                                     TO-92
                                                                   1.   EMITTER

                                                                   2.   BASE

                                                                   3. COLLECTOR




Features

       Switching and amplification in high voltage
       Applications such as telephony
       Low current(max. 600mA)
       High voltage(max.160v)


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                 Parameter                     Value        Units
                                                                                       Dimensions in inches and (millimeters)
VCBO        Collector-Base Voltage                    -160          V
VCEO        Collector-Emitter Voltage                 -150          V
VEBO        Emitter-Base Voltage                       -5           V
IC          Collector Current -Continuous             -0.6          A
PC          Collector Power Dissipation              0.625         W
Tj          Junction Temperature                      150          
Tstg        Storage Temperature                      -55-150       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

          Parameter                          Symbol              Test     conditions      MIN      TYP      MAX       UNIT

Collector-base breakdown voltage            V(BR)CBO           IC= -100A, IE=0            -160                         V

Collector-emitter breakdown voltage         V(BR)CEO           IC= -1mA, IB=0             -150                         V

Emitter-base breakdown voltage              V(BR)EBO           IE= -10A, IC=0              -5                          V

Collector cut-off current                    ICBO              VCB= -120 V,     IE=0                         -50       nA
Emitter cut-off current                      IEBO              VEB= -3V, IC=0                                -50       nA

                                            hFE(1)             VCE= -5V, IC=-1 mA          80

DC current gain                             hFE(2)             VCE= -5V, IC= -10 mA        60                240

                                            hFE(3)             VCE= -5V, IC=-50 mA         50

Collector-emitter saturation voltage        VCE(sat)           IC= -50mA, IB= -5 mA                          -0.5      V

Base-emitter saturation voltage             VBE(sat)           IC= -50mA, IB= -5 mA                           -1       V
                                                               VCE=-5V,     IC=-10mA
Transition frequency                         fT                f =30MHz
                                                                                          100                300      MHz
                           2N5401(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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