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                                                                                                2SA1585S
                                                                                          TO-92S Transistor (PNP)

                                               1. EMITTER                                           TO-92S

                                               2. COLLECTOR


                              123              3. BASE

Features
        Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)
        Excellent DC current gain characteristics.
        Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol               Parameter                     Value       Units

 VCBO      Collector-Base Voltage                   -20          V

 VCEO      Collector-Emitter Voltage                -20          V

 VEBO      Emitter-Base Voltage                     -6           V
                                                                                       Dimensions in inches and (millimeters)
  IC       Collector Current -Continuous            -2           A

  PC       Collector Power Dissipation             400          mW

  Tj       Junction Temperature                    150               
 Tstg      Storage Temperature Range            -55-150              

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                            Symbol     Test      conditions       MIN      TYP      MAX      UNIT

 Collector-base breakdown voltage                  V(BR)CBO   IC= -50A , IE=0            -20                          V

 Collector-emitter breakdown voltage               V(BR)CEO   IC= -1mA , IB=0            -20                          V

 Emitter-base breakdown voltage                    V(BR)EBO   IE=- 50A, IC=0              -6                          V

 Collector cut-off current                           ICBO     VCB=-20V ,     IE=0                           -0.1     A

 Emitter cut-off current                             IEBO     VEB= -5V , IC=0                               -0.1     A

 DC current gain                                     hFE      VCE=-2V,     IC= -0.1A     120                560

 Collector-emitter saturation voltage               VCEsat    IC= -2A, IB=-0.1A                             -0.5      V
                                                              VCE=-2V, IC=-0.5A
 Transition frequency                                 fT      F=100MHz
                                                                                         200                         MHz


CLASSIFICATION OF hFE
                                           Q
  Rank                                                                        R                             s

  Range                                  120-170                           180-390                      270-560
                              2SA1585S
                          TO-92S Transistor (PNP)


Typical Characteristics

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