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2SA1662
SOT-89 Transistor(PNP)
1. BASE
SOT-89
4.6
2. COLLECTOR B
1 1.6
4.4
1.8
1.4 1.4
2
3. EMITTER
3 2.6 4.25
2.4 3.75
Features 0.8
MIN
0.53
0.48 0.40
Complementary to KTC4374 0.44
0.37
0.13 B 0.35
2x)
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.4 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-80V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
hFE(1) VCE=-2V,IC=-50mA 70 240
DC current gain
hFE(2) VCE=-2V,IC=-200mA 40
Collector-emitter saturation voltage VCE(sat) IC=-200mA,IB=-20mA -0.4 V
Base-emitter voltage VBE VCE=-2V,IC=-5mA -0.55 -0.8 V
Transition frequency fT VCE=-10V,IC=-10mA 120 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 14 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
Marking FO FY
2SA1662
SOT-89 Transistor(PNP)
Typical Characteristics
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