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                                                                                           2SA1700(PNP)
                                                                                        TO-251/TO-252-2L Transistor

                                                                                                     TO-251
                                            1.BASE


                                            2.COLLECTOR


                                            3.EMITTER


                   1    2 3
Features
       High breakdown voltage
       Adoption of MBIT process
       Excellent hFE linearity
                                                                                                     TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                 Parameter             Value            Units
VCBO       Collector-Base Voltage            -400                V
VCEO       Collector-Emitter Voltage         -400                V
VEBO       Emitter-Base Voltage                  -5              V
IC         Collector Current 

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