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2SA1740
SOT-89 Transistor(PNP)
SOT-89
1. BASE
2. COLLECTOR 4.6
B
4.4
1 1.6
1.8
1.4 1.4
2 3. EMITTER
3 2.6 4.25
2.4 3.75
Features 0.8
MIN
0.53
High breadown voltage 0.44 0.13 B
0.48 0.40
0.35
2x)
0.37
1.5
Excellent hFE linearlity 3.0
Marking: AK Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V
VCEO Collector-Emitter Voltage -400 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -200 mA
PC Collector Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -400 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-300V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-4V,IC=0 -100 nA
DC current gain hFE VCE=-10V,IC=-50mA 60 200
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V
Transition frequency fT VCE=-30V,IC=-10mA 70 MHz
Collector output capacitance Cob VCB=-30V,IE=0,f=1MHz 5 pF
Turn-ON Time ton 0.25 s
VCC=-150V,Ic=-50mA,
IB1=-IB2=-5mA
Turn-OFF Time toff 5 s
CLASSIFICATION OF hFE
Rank D E
Range 60-120 100-200
2SA1740
SOT-89 Transistor(PNP)
Typical Characteristics
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