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2SA1797
SOT-89 Transistor(PNP)
1. BASE SOT-89
1 2. COLLECTOR 4.6
B
4.4
1.6
1.8
1.4
2 3. EMITTER 1.4
3 2.6 4.25
2.4 3.75
Features 0.8
MIN
0.53
Low saturation voltage 0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
Excellent DC current gain characteristics 1.5
3.0
Complements to 2SC4672
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -2 A
PC Collector Power dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -6 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC=-500mA 82 270
Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.35 V
Transition frequency fT VCE=-2V, IC=-0.5A, f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 36 pF
CLASSIFICATION OF hFE
Rank P Q
Range 82-180 120-270
Marking AGP AGQ
2SA1797
SOT-89 Transistor(PNP)
Typical Characteristics
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