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                                                                                                2SA1037
                                                                                           SOT-23 Transistor(PNP)
                                                                                                     SOT-23
                                        1. BASE
                                        2. EMITTER
                                        3. COLLECTOR


Features
        Excellent hFE linearity.
        Complments the 2SC2412

MARKING : FQ, FR, FS

                                                                                      Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                   Parameter                                     Value                 Units
VCBO                Collector-Base Voltage                                                     -60                    V
VCEO                Collector-Emitter Voltage                                                  -50                    V
VEBO                Emitter-Base Voltage                                                        -6                    V
IC                  Collector Current -Continuous                                              150                    mA
PC                  Collector Power Dissipation                                                200                    mW
TJ                  Junction Temperature                                                       150                    
Tstg                Storage Temperature                                                      -55-150                  

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
            Parameter                           Symbol       Test   conditions                   MIN     TYP       MAX      UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=-50A,IE=0                          -60                         V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=-1mA,IB=0                          -50                         V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=-50A,IC=0                           -6                         V

 Collector cut-off current                        ICBO     VCB=-60V,IE=0                                           -0.1     A

 Emitter cut-off current                          IEBO     VEB=-6V,IC=0                                            -0.1     A

 DC current gain                                  hFE      VCE=-6V,IC=-1mA                       120               560

 Collector-emitter saturation voltage           VCE(sat)   IC=-50mA,IB=-5mA                                        -0.5      V

 Transition frequency                              fT      VCE=-12V,IC=-2mA,f=30MHz                      140                MHz

 Collector output capacitance                     Cob      VCB=-12V,IE=0,f=1MHz                          4.0        5.0     pF

 CLASSIFICATION OF           hFE
 Rank                                            Q                                R                               S

 Range                                       120 - 270                        180 - 390                        270 - 560
                              2SA1037
                          SOT-23 Transistor(PNP)



Typical Characteristics

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