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                                                                                                  2SA608(PNP)
                                                                                                 TO-92 Bipolar Transistors

                                                                                                             TO-92
                                                                    1. EMITTER

                                                                    2. COLLECTOR

                                                                    3. BASE



Features
         Capable of being used in the low frequency to high
         frequency range.
         Large current capacity and wide ASO.


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                     Parameter                    Value           Units
VCBO           Collector-Base Voltage                      -40            V
VCEO           Collector-Emitter Voltage                   -30            V
VEBO           Emitter-Base Voltage                        -5             V             Dimensions in inches and (millimeters)

IC             Collector Current -Continuous             -100            mA
PC             Collector Power Dissipation                 400           mW
TJ             Junction Temperature                      150              
Tstg           Storage Temperature                      -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                        Symbol            Test     conditions      MIN        TYP       MAX        UNIT

     Collector-base breakdown voltage           V(BR)CBO         IC=-100A, IE=0            -40                              V

     Collector-emitter breakdown voltage        V(BR)CEO         IC=-1mA, IB=0             -30                              V

     Emitter-Base breakdown voltage             V(BR)EBO         IE=-100A, IC=0             -5                              V

     Collector cut-off current                    ICBO           VCB=-25V, IE=0                                  -1        A

     Emitter cut-off current                      IEBO           VEB=-4V, IC=0                                   -1        A

     DC current gain                              hFE            VCE=-6V, IC=-1mA          60                    560

     Collector-emitter saturation voltage       VCE(sat)         IC=-50mA, IB=-5mA                               -0.5       V

     Transition frequency                          fT            VCE=-6V, IC=-10mA                     180                 MHz

     Collector output capacitance                Cob             VCB=-6V, f=1MHz                        7                  pF


 CLASSIFICATION OF               hFE
     Rank                                D                         E                        F                         G

     Range                             60-120                100-200                    160-320                  280-560
                           2SA608(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics
 2SA608(PNP)
TO-92 Bipolar Transistors

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