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                                                                                 2SA719/2SA720(PNP)
                                                                                      TO-92 Bipolar Transistors


                                                                 1. EMITTER                         TO-92
                                                                 2. COLLECTOR

                                                                 3. BASE




Features
        For low-frequency power amplification
        and driver amplification

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                  Parameter                     Value         Units
VCBO         Collector-Base Voltage    2SA719           -30
                                                                      V
                                       2SA720           -60
VCEO          Collector-Emitter Voltage 2SA719          -25
                                                                      V
                                       2SA720           -50
                                                                                      Dimensions in inches and (millimeters)
VEBO         Emitter-Base Voltage                        -5           V
IC           Collector Current -Continuous             -500          mA
PC           Collector Power Dissipation                625          mW
TJ           Junction Temperature                       150           
Tstg         Storage Temperature                      -55-150         

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                Parameter                          Symbol           Test      conditions     MIN       TYP      MAX       UNIT
     Collector-base breakdown voltage
                                      2SA719       V(BR)CBO      IC= -10uA, IE=0              -30                          V
                                      2SA720                                                  -60
     Collector-emitter breakdown voltage
                                      2SA719       V(BR)CEO      IC= -10mA ,IB=0              -25                          V
                                      2SA720                                                  -50
     Emitter-base breakdown voltage                V(BR)EBO      IE= -10uA, IC=0               -5                          V
     Collector cut-off current                         ICBO      VCB= -20V,IE=0                                    -0.1   uA
     Emitter cut-off current                           IEBO      VEB= -4V,IC=0                                     -0.1   uA
                                                      hFE(1)     VCE=-10V, IC= -150mA         85               340
     DC current gain
                                                      hFE(2)     VCE=-10V, IC= -500mA         40
     Collector-emitter saturation voltage             VCE(sat)   IC=-300mA, IB= -30mA                              -0.6    V
     Base-emitter saturation voltage                  VBE(sat)   IC= -300mA, IB=-30mA                              -1.5    V
                                                                 VCE= -10V, IC= -50mA
     Transition frequency                                fT                                            200                MHz
                                                                 f = 200MHz
     Collector Output Capacitance                      Cob       VCB=-10V,IE=0,f=1MHZ                              15      pF

 CLASSIFICATION hFE(1)
     Rank                                      Q                                  R                            S
     Range                                   85-170                             120-240                      170-340
                          2SA719/2SA720(PNP)
                            TO-92 Bipolar Transistors

Typical Characteristics
2SA719/2SA720(PNP)
  TO-92 Bipolar Transistors

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