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2SA817A
TO-92MOD Transistor (PNP)
TO-92MOD
5.800
6.200
1. EMITTER
1
2 8.400
3 2. COLLECTOR 8.800
0.900
3. BASE 1.100
0.400
0.600
13.800
14.200
Features
Complementary to 2SC1627A. 1.500 TYP
2.900
3.100
Driver Stage Application of 30 to
0.000 1.600
35 Watts Amplifiers. 0.380
0.400 4.700
0.500 5.100
1.730
4.000 2.030
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -400 mA
PC Collector Power Dissipation 800 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100 uA, IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC= -5 mA, IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -50 V , IE=0 -0.1 A
Collector cut-off current IEBO VEB= -5V , IB=0 -0.1 A
hFE(1) VCE= -2V, IC= -50mA 70 240
DC current gain
hFE(2) VCE= -2V, IC= -200mA 40
Collector-emitter saturation voltage VCE(sat) IC=-200 mA, IB= -20mA -0.4 V
Base-emitter voltage VBE VCE= -2V , IC= -5mA -0.55 -0.8 V
Transition frequency fT VCE=-10V, IC=-10mA 100 MHz
Out capacitance Cob VCB= -10 V , f=1MHZ 14 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120 - 240
2SA817A
TO-92MOD Transistor (PNP)
Typical Characteristics
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