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                                                                                                   2SA950(PNP)
                                                                                              TO-92 Bipolar Transistors

                                                                                                           TO-92
                                                                      1. EMITTER

                                                                      2. COLLECTOR

                                                                      3. BASE




Features
       1W output applications
       complementary to 2SC2120

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                    Parameter                          Value          Units
VCBO        Collector-Base Voltage                            -35               V
VCEO        Collector-Emitter Voltage                         -30               V
VEBO        Emitter-Base Voltage                              -5                V
                                                                                           Dimensions in inches and (millimeters)
IC          Collector Current -Continuous                    -0.8               A
PC          Collector Power Dissipation                       0.6               W
Tj          Junction Temperature                             150                
Tstg        Storage Temperature                           -55 to +150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                         Symbol                 Test   conditions       MIN      TYP      MAX        UNIT

Collector-base breakdown voltage              V(BR)CBO             IC= -0.1mA , IE=0          -35                          V

Collector-emitter breakdown voltage           V(BR)CEO             IC= -10mA , IB=0           -30                          V

Emitter-base breakdown voltage                V(BR)EBO             IE= -0.1mA, IC=0           -5                           V

Collector cut-off current                          ICBO            VCB= -35V, IE=0                                 -0.1   A

Emitter cut-off current                            IEBO            VEB= -5V, IC=0                                  -0.1   A

                                                  hFE(1)           VCE=-1V, IC=-100mA        100                   320
DC current gain
                                                  hFE(2)           VCE=-1V, IC= -700mA        35

Collector-emitter saturation voltage              VCE(sat)         IC= -500mA, IB= -20mA                           -0.7    V

Emitter-base voltage                               VBE             VCE=-1V, IC=-10mA         -0.5                  -0.8    V

                                                                   VCB=-10V,IE=0
Collector Output Capacitance                        Cob                                                19                  pF
                                                                   f=1MHz

Transition frequency                                 fT            VCE=-5V,IC=-10mA                    120                MHz

CLASSIFICATION OF hFE(1)
Rank                                      O                                                            Y

Range                                   100-200                                                     160-320
                           2SA950(PNP)
                          TO-92 Bipolar Transistors


Typical Characteristics

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