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2SB1440
SOT-89 Transistor(PNP)
1. BASE
SOT-89
2. COLLECTOR
1 4.6
B
4.4
2 1.6
1.4
1.8
3. EMITTER 1.4
3
Features 2.6 4.25
2.4 3.75
Low collector-emitter saturation voltage VCE(sat) 0.8
MIN
0.53
For low-frequency output amplification 0.44 0.13 B
0.48 0.40
2x)
0.37 0.35
Complementary to 2SD2185 1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A
hFE1 VCE=-2V, IC=-200mA 120 340
DC current gain
hFE2 VCE=-2V, IC=-1A 60
Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.3 V
Base- emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1..2 V
Transition frequency fT VCE=-10V, IC=50mA, f=200MHz 80 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 60 pF
CLASSIFICATION OF hFE1
Rank R S
Range 120-240 170-340
Marking 1L
2SB1440
SOT-89 Transistor(PNP)
Typical Characteristics
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