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2SB1132
SOT-89 Transistor(PNP)
1. BASE
2. COLLECTOR
SOT-89
1 4.6
B
4.4
1.6
2 3. EMITTER 1.4
1.8
1.4
3
2.6 4.25
Features 2.4 3.75
0.8
MIN
Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA 0.53
0.44 0.48 0.40
Compliments 2SD1664 0.37
0.13 B 0.35
2x)
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A
DC current gain hFE VCE=-3V,IC=-100mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.2 -0.5 V
Transition frequency fT VCE=-5V,IC=-50mA,f=30MHz 150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 30 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking BAP BAQ BAR
2SB1132
SOT-89 Transistor(PNP)
Typical Characteristics
2SB1132
SOT-89 Transistor(PNP)
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