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2SB1197
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A.
Complements the 2SD1781.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector- Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.8 A
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-50A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE= -50A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A
Emitter cut-off current IEBO VEB= -4V,IC=0 -0.5 A
DC current gain hFE VCE=-3V,IC= -100mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.5 V
VCE=-5V, IC= -50mA,
Transition frequency fT 50 200 MHz
f=100MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 12 30 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking AHP AHQ AHR
2SB1197
SOT-23 Transistor(PNP)
TYPICAL CHARACTERISTICS
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