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                                                                                                 2SB1198K
                                                                                             SOT-23-3L Transistor(PNP)

                                         1. BASE                                                     SOT-23-3L
                                         2. EMITTER
                                                                                                  2.92
                                         3. COLLECTOR                                                    0.35
                                                                                                                                     1.17




Features
                                                                                  2.80                                 1.60
       Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA)
       High breakdown voltage BVCEO=-80V
       Complements the 2SD1782K                                                                                               0.15
                                                                                                  1.90



                                                                                         Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                 Parameter                       Value          Units
VCBO         Collector-Base Voltage                     -80             V
VCEO         Collector-Emitter Voltage                  -80             V
VEBO         Emitter-Base Voltage                        -5             V
IC           Collector Current -Continuous             -500            mA
PC           Collector Power Dissipation                200            mW
TJ           Junction Temperature                       150             
Tstg         Storage Temperature                  -55-150               

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                        Symbol                  Test      conditions               MIN          TYP     MAX      UNIT

 Collector-base breakdown voltage             V(BR)CBO         IC=-50A, IE=0                             -80                                V

 Collector-emitter breakdown voltage          V(BR)CEO         IC=-2mA, IB=0                             -80                                V

 Emitter-base breakdown voltage                V(BR)EBO        IE=-50A, IC=0                              -5                                V

 Collector cut-off current                      ICBO           VCB=-50V, IE=0                                                 -0.5          A

 Emitter cut-off current                         IEBO          VEB=-4V, IC=0                                                  -0.5          A

 DC current gain                                hFE(1)         VCE=-3V, IC=-100mA                        120                  390

 Collector-emitter saturation voltage          VCE(sat)        IC=-500mA, IB=-50mA                                            -0.5          V

 Transition frequency                             fT           VCE=-10V, IC=-50mA, f=100MHz                           180               MHz

 Collector output capacitance                    Cob           VCB=-10V, IE=0, f=1MHz                                 11                    pF


CLASSIFICATION OF        hFE(1)
 Rank                                                  Q                                                          R

 Range                                           120-270                                                        180-390

 MARKING                                          AKQ                                                            AKR
                              2SB1198K
                          SOT-23-3L Transistor(PNP)


Typical Characteristics

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