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2SB560
TO-92MOD Transistor (PNP)
1. EMITTER TO-92MOD
5.800
1 2. COLLECTOR 6.200
2
3
3. BASE
8.400
8.800
Features 0.900
1.100
0.400
High reverse voltage 0.600
Low saturation voltage 13.800
14.200
Suitable universal AF power amplifier use
MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.500 TYP
2.900
3.100
Symbol Parameter Value Units
0.000 1.600
Collector-Base Voltage -100 V 0.380
VCBO
0.400 4.700
VCEO Collector-Emitter Voltage -80 V 0.500 5.100
VEBO Emitter-Base Voltage -5 V 1.730
4.000 2.030
IC Collector Current -Continuous -0.7 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 900 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10 uA, IE=0 -100 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA, IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE= -10 A, IC=0 -5 V
Collector cut-off current ICBO VCB= -20 V , IE=0 -1 A
Collector cut-off current IEBO VEB= -4V , IB=0 -1 A
hFE(1) VCE= -5V, IC= -50mA 60 560
DC current gain
hFE(2) VCE= -5V, IC= -500mA 30
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.3 -0.8 V
Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -0.85 -1.2 V
Transition frequency fT VCE=-10V, IC=-50mA 100 MHz
Out capacitance Cob VCB= -10 V ,f=1MHZ 15 pF
CLASSIFICATION OF hFE(1)
Rank D E F G
Range 60 - 120 100 - 200 160 - 320 280 - 560
2SB560
TO-92MOD Transistor (PNP)
Typical Characteristics
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