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                                                                                          2SC1623
                                                                                    SOT-23 Transistor(NPN)


                                            1. BASE
                                                                                                SOT-23
                                            2. EMITTER
                                            3. COLLECTOR




Features
      High DC current gain :hFE=200(Typ)VCE=6V,              IC=1mA
      High voltage:VCEO=50V

MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                Parameter                   Value         Units
 VCBO              Collector-Base Voltage                   60           V
                                                                                 Dimensions in inches and (millimeters)
 VCEO              Collector-Emitter Voltage                50           V
 VEBO              Emitter-Base Voltage                     5            V
 IC                Collector Current -Continuous           100          mA
 PC                Collector Power Dissipation             200          mW
 TJ                Junction Temperature                    150           
 Tstg              Storage Temperature                    -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                          Symbol       Test    conditions             MIN     TYP     MAX     UNIT

Collector-base breakdown voltage               V(BR)CBO   IC=100A,IE=0                     60                       V

Collector-emitter breakdown voltage            V(BR)CEO   IC=1mA,IB=0                      50                       V

Emitter-base breakdown voltage                 V(BR)EBO   IE=100A,IC=0                      5                       V

Collector cut-off current                        ICBO     VCB=60V,IE=0                                     0.1      A

Emitter cut-off current                          IEBO     VEB=5V,IC=0                                      0.1      A

DC current gain                                  hFE      VCE=6V,IC=1mA                    90      200     600

Collector-emitter saturation voltage           VCE(sat)   IC=100mA,IB=10mA                                 0.3      V

Base-emitter saturation voltage                VBE(sat)   IC=100mA,IB=10mA                                  1       V

Transition frequency                              fT      VCE=6V,IC=10mA                           250             MHz

CLASSIFICATION OF           hFE
Rank                                L4                             L5               L6                      L7

Range                             90-180                     135-270             200-400                 300-600

Marking                             L4                             L5               L6                      L7
                              2SC1623
                          SOT-23 Transistor(NPN)



Typical Characteristics
    2SC1623
SOT-23 Transistor(NPN)

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