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                                                                                                2SC2715
                                                                                           SOT-23 Transistor(NPN)


                                            1. BASE                                                SOT-23
                                            2. EMITTER
                                            3. COLLECTOR




Features
        High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz)
        Recommended for FM IF,OSC Stage and AM CONV. IF Stage.


MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                 Parameter                   Value       Units
                                                                                      Dimensions in inches and (millimeters)
VCBO        Collector-Base Voltage                      35        V
VCEO        Collector-Emitter Voltage                   30        V
VEBO        Emitter-Base Voltage                        4         V
IC          Collector Current -Continuous               50       mA
PC          Collector Power Dissipation               350        mW
Tj          Junction Temperature                      150         
Tstg        Storage Temperature                    -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                            Symbol                Test   conditions          MIN     TYP       MAX   UNIT

 Collector-base breakdown voltage               V(BR)CBO     IC=10A, IE=0                        35                        V

 Collector-emitter breakdown voltage            V(BR)CEO     IC=1mA, IB=0                        30                        V

 Emitter-base breakdown voltage                 V(BR)EBO     IE=10A, IC=0                         4                        V

 Collector cut-off current                        ICBO       VCB=35V, IE=0                                         0.1    A

 Emitter cut-off current                          IEBO       VEB=4V, IC=0                                          0.1    A

 DC current gain                                  hFE(1)     VCE=12V, IC=2mA                     40                240

 Collector-emitter saturation voltage           VCE(sat)     IC=10mA, IB=1mA                                       0.4     V

 Base-emitter saturation voltage                VBE(sat)     IC=10mA, IB=1mA                                         1     V

 Transition frequency                              fT        VCE=10V, IC=1mA                     100               400   MHz

 Power Gain                                       Gpe        VCE=6V, IC=1mA, f=10.7MHZ           27                33     dB



 CLASSIFICATION OF           hFE(1)
 Rank                                       R                                   O                              Y
 Range                                    40-80                              70-140                        120-240
 Marking                                  RR1                                  RO1                             RY1
                              2SC2715
                          SOT-23 Transistor(NPN)



Typical Characteristics
    2SC2715
SOT-23 Transistor(NPN)
    2SC2715
SOT-23 Transistor(NPN)

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