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                                                                                                       2SC2785
                                                                                                    TO-92S Transistor (NPN)

                                             1. EMITTER
                                                                                                          TO-92S

                                             2. COLLECTOR


                             123             3. BASE
Features
       High voltage VCEO:50V
       Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA)
       Complementary to 2SA1175 PNP transistor

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol              Parameter                                Value       Units

VCBO                Collector-Base Voltage                     60             V

VCEO                Collector-Emitter Voltage                  50             V
VEBO                Emitter-Base Voltage                       5              V
IC                  Collector Current -Continuous              0.1            A
                                                                                           Dimensions in inches and (millimeters)
PC                  Collector Power Dissipation               0.25            W
TJ                  Junction Temperature                      150             
Tstg                Storage Temperature                      -55-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                          Symbol                 Test       conditions             MIN      TYP   MAX     UNIT

 Collector-base breakdown voltage               V(BR)CBO      IC=100A, IE=0                              60                          V

 Collector-emitter breakdown voltage            V(BR)CEO      IC=1mA, IB=0                               50                          V

 Emitter-base breakdown voltage                 V(BR)EBO      IE=100A, IC=0                               5                          V

 Collector cut-off current                        ICBO        VCB=60V, IE=0                                             0.1         A

 Emitter cut-off current                          IEBO        VEB=5V, IC=0                                              0.1         A

                                                 hFE(1)       VCE=6V, IC=1mA                             110            600
 DC current gain
                                                 hFE(2)       VCE=6V, IC=0.1mA                           50

 Collector-emitter saturation voltage           VCE(sat)      IC=100mA, IB=10mA                                         0.3          V

 Base-emitter saturation voltage                VBE(sat)      IC=100mA, IB=10mA                                          1           V

 Base-emitter voltage                             VBE         VCE=6V, IC=1mA                                            0.65         V

 Transition frequency                              fT         VCE=6V, IC=10mA                            150                        MHz

 Collector output capacitance                     Cob         VCB=6V, IE=0,f=1MHz                                        4          pF

 Noise figure                                     NF          VCE=6V, Ic=0.1mA,f=1KHZ, Rg=2K                            15          dB

 CLASSIFICATION OF           hFE(1)
 Rank                            RF                     JF               HF                    FF               EF             KF
 Range                        110-180            135-220               170-270           200-320              250-400     300-600
                             2SC2785
                          TO-92S Transistor (NPN)



Typical Characteristics
   2SC2785
TO-92S Transistor (NPN)

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