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TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
High hFE hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V
MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10
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