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                                                                                                      2SC4097
                                                                                                SOT-323 Transistor(NPN)

                                                  1. BASE
                                                                                                        SOT-323
                                                  2. EMITTER

Features                                          3. COLLECTOR


       High ICMax. ICMax=0.5A
       Low VCE(sat).Optimal for low voltage operation.
       Complements the 2SA1577


MAXIMUM RATINGS (TA=25unless otherwise noted)

 Symbol                Parameter                    Value         Units
VCBO         Collector-Base Voltage                     40          V
VCEO         Collector-Emitter Voltage                  32          V                       Dimensions in inches and (millimeters)
VEBO         Emitter-Base Voltage                        5          V
IC           Collector Current -Continuous              500        mA
PC           Collector Power Dissipation                200        mW
TJ           Junction Temperature                       150         
Tstg         Storage Temperature                   -55-150          



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                       Symbol                     Test   conditions              MIN     TYP         MAX    UNIT
 Collector-base breakdown voltage             V(BR)CBO        IC=100A,IE=0                              40                         V
 Collector-emitter breakdown voltage          V(BR)CEO        IC=1mA,IB=0                               32                         V
 Emitter-base breakdown voltage               V(BR)EBO        IE=100A,IC=0                              5                          V
 Collector cut-off current                        ICBO        VCB=20V,IE=0                                                  1     A
 Emitter cut-off current                          IEBO        VEB=4V,IC=0                                                   1     A
 DC current gain                                  hFE         VCE=3V,IC=10mA                            82                 390
 Collector-emitter saturation voltage         VCE(sat)        IC=100mA, IB=10mA                                             0.4    V
 Transition frequency                              fT         VCE=5V, IC=20mA,f =100MHz                        250                MHz

 Collector Output Capacitance                     Cob         VCB=10V,IE=0,f=1MHZ                                6                pF


CLASSIFICATION OF        hFE

 Rank                                        P                                      Q                                  R

 Range                                     82-180                                120-270                             180-390

 MARKING                                     CP                                    CQ                                  CR
                              2SC4097
                          SOT-323 Transistor(NPN)


Typical Characteristics

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