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                                                                                                       2SC4215
                                                                                                SOT-323 Transistor(NPN)


                                                 1. BASE                                                 SOT-323
                                                 2. EMITTER
                                                 3. COLLECTOR



Features
          Small reverse transfer capacitance: Cre= 0.55pF(typ.)
          Low noise figure: NF=2dB (typ.) (f=100 MHz)


MAXIMUM RATINGS (TA=25 unless otherwise noted)

   Symbol                 Parameter                        Value       Units
                                                             40          V                   Dimensions in inches and (millimeters)
   VCBO         Collector-Base Voltage
   VCEO         Collector-Emitter Voltage                    30          V
   VEBO         Emitter-Base Voltage                         4           V
   IC           Collector Current -Continuous                20         mA
   PC           Collector Power Dissipation                100          mW
   TJ           Junction Temperature                       150           
   Tstg         Storage Temperature                       -55-150        



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

             Parameter                            Symbol              Test      conditions      MIN      TYP      MAX     UNIT
Collector-base breakdown voltage                  V(BR)CBO        IC=100A,IE=0                   40                         V
Collector-emitter breakdown voltage               V(BR)CEO        IC=1mA,IB=0                    30                         V
Emitter-base breakdown voltage                    V(BR)EBO        IE=100A,IC=0                    4                         V
Collector cut-off current                           ICBO          VCB=40V,IE=0                                     0.1     A
Emitter cut-off current                             IEBO          VEB=4V,IC=0                                      0.5     A
DC current gain                                     hFE           VCE=6V,IC=1mA                  40               200
Collector-base time constant                      Cc.rbb          VCE=6V,IC=1mA, f=30MHZ                           25       ps
Transition frequency                                 fT           VCE=6V,IC=1mA,                 260     550               MHz
Reverse transfer capacitance                        Cre           VCB=10V,f=1MHz                         0.55               pF

Noise figure                                        NF                                                    2         5      dB
                                                                  VCC=6V,Ic=1mA,f=100MHZ
Power gain                                         Gpe                                           17       23               dB



CLASSIFICATION OF hFE
 Rank                                       R                                      O                              Y
 Range                                   40-80                                   70-140                         100-200
Marking                                   QR                                       QO                             QY
                              2SC4215
                          SOT-323 Transistor(NPN)


Typical Characteristics
    2SC4215
SOT-323 Transistor(NPN)

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