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                                                                                                   2SC5343
                                                                                             SOT-23 Transistor(NPN)

                                               1. BASE                                                   SOT-23
                                               2. EMITTER
                                               3. COLLECTOR


Features
         Excellent hFE Linearity
          : hFE(2)=100(Typ) at VCE=6V,IC=150mA
          : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ).
         Low Noise: NF=1dB(Typ). At f=1KHZ.

MAXIMUM RATINGS (TA=25 unless otherwise noted)
        Symbol               Parameter                       Value            Units
                                                                                         Dimensions in inches and (millimeters)
 VCBO              Collector-Base Voltage                      60               V
 VCEO              Collector-Emitter Voltage                   50               V
 VEBO              Emitter-Base Voltage                        5                V
 IC                Collector Current -Continuous              150              mA
 Ib                Base Current -Continuous                    50              mA
 PC                Collector Power dissipation                 0.2              W
 TJ                Junction Temperature                       150               
 Tstg              Storage Temperature                       -55-150            

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                             Symbol         Test       conditions              MIN     TYP    MAX      UNIT

Collector-base breakdown voltage                  V(BR)CBO    IC=100A,IE=0                          60                       V

Collector-emitter breakdown voltage               V(BR)CEO    IC=10mA,IB=0                          50                       V

Emitter-base breakdown voltage                    V(BR)EBO    IE=10A,IC=0                            5                       V

Collector cut-off current                           ICBO      VCB=60V,IE=0                                          0.1     A

Emitter cut-off current                             IEBO      VEB=5V,IC=0                                           0.1     A

DC current gain                                    hFE(1)     VCE=6V,IC=2mA                         70              700

Collector-emitter saturation voltage              VCE(sat)    IC=100mA,IB=10mA                              0.1    0.25      V

Transition frequency                                 fT       VCE=10V,IC=1mA                        80                      MHz

Collector output capacitance                        Cob       VCB=10V,IE=0,f=1MHz                                   3.5      pF

                                                              VCE=6V,Ic=0.1mA,
Noise figure                                        NF                                                              10      dB
                                                              f=1KHZ,Rg=10K
CLASSIFICATION OF            hFE
Rank                                   O                                Y                     G                      L

Range                              70-140                            120-240              200-400                 300-700
                              2SC5343
                          SOT-23 Transistor(NPN)


Typical Characteristics

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