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2SD1664
SOT-89 Transistor(NPN)
1. BASE
SOT-89
1 2. COLLECTOR
4.6
B
2 1.6
4.4
1.8
1.4
3. EMITTER 1.4
3
Features 2.6 4.25
2.4 3.75
0.8
Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN
0.53
Complements to 2SB1132 0.44 0.13 B
0.48 0.40
2x)
0.37 0.35
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector power dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC =0 5 V
Collector cut-off current ICBO VCB=20V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE VCE=3V, IC=100mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=50mA 0.4 V
Transition frequency fT VCE=5V, IC=50mA, f=100MHz 150 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 15 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking DAP DAQ DAR
2SD1664
SOT-89 Transistor(NPN)
Typical Characteristics
2SD1664
SOT-89 Transistor(NPN)
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