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                                                                                                     2SD1758(NPN)
                                                                                                   TO-251/TO-252-2L Transistor
                                                                                                           TO-251

                                                         1.BASE


                                                         2.COLLECTOR


                                                         3.EMITTER

                     1   2 3

Features
       Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A)

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                             TO-252-2L
 Symbol                  Parameter                       Value           Units
VCBO          Collector-Base   Voltage                    40              V
VCEO          Collector-Emitter Voltage                   32              V
VEBO          Emitter-Base Voltage                           5            V
IC            Collector Current -Continuous                  2            A
PC            Collector dissipation                       1.2             W
TJ            Junction Temperature                       150              
Tstg          Storage Temperature                       -55-150                                Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25                                  unless        otherwise     specified)

             Parameter                            Symbol          Test     conditions                    MIN     TYP        MAX   UNIT

 Collector-base breakdown voltage                 V(BR)CBO        IC=50A, IE=0                            40                       V

 Collector-emitter breakdown voltage              V(BR)CEO        IC=1mA, IB=0                            32                       V

 Emitter-base breakdown voltage                   V(BR)EBO        IE=50A, IC=0                            5                        V

 Collector cut-off current                        ICBO            VCB=20V, IE=0                                              1    A

 Emitter cut-off current                          IEBO            VEB=4V, IC=0                                               1    A

 DC current gain                                  hFE             VCE=3V, IC=500mA                        82                390

 Collector-emitter saturation voltage             VCE(sat)        IC=2A, IB=0.2A                                            0.8    V

 Transition frequency                             fT              VCE=5V, IC=50mA, f=100MHz                       100             MHz

 Collector output capacitance                     Cob             VCB=10V, IE=0, f=1MHz                           30              pF

 CLASSIFICATION OF             hFE
 Rank                                         P                                         Q                               R

 Range                                    82-180                                    120-270                         180-390
                           2SD1758(NPN)
                          TO-251/TO-252-2L Transistor


Typical Characteristics

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