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                                                                                                2SD1899-Z(NPN)
                                                                                               TO-251/TO-252-2L Transistor

                                                                                                           TO-251
                                                         1.BASE

                                                         2.COLLECTOR

                                                         3.EMITTER



                   1    2 3

Features
        High hFE hFE=100 to 400
        Low VCE(sat) VCE(sat)=0.25V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                           TO-252-2L
 Symbol                    Parameter                       Value         Units
VCBO        Collector-Base Voltage                           60           V
VCEO        Collector-Emitter Voltage                        60           V
VEBO        Emitter-Base Voltage                             7            V
IC          Collector Current -Continuous                    3            A
PC          Collector Power Dissipation                      1            W
TJ          Junction Temperature                            150           
Tstg        Storage Temperature                           -55-150         
                                                                                             Dimensions in inches and (millimeters)
 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

           Parameter                            Symbol            Test    conditions                 MIN     TYP       MAX    UNIT

 Collector-base breakdown voltage               V(BR)CBO      IC=100A,IE=0                           60                        V

 Collector-emitter breakdown voltage            V(BR)CEO      IC =1mA,IB=0                           60                        V

 Emitter-base breakdown voltage                 V(BR)EBO      IE=100A,IC=0                            7                        V

 Collector cut-off current                        ICBO        VCB=60V,IE=0                                             10     A

 Emitter cut-off current                          IEBO        VEB=7V,IC=0                                              10     A

                                                 hFE(1)       VCE=2V,IC=200mA                        60

 DC current gain                                 hFE(2)       VCE=2V,IC=600mA                        100               400

                                                 hFE(3)       VCE=2V,IC=2A                           50

 Collector-emitter saturation voltage           VCE(sat)      IC=1.5A,IB=150mA                                         0.25    V

 Base-emitter saturation voltage                VBE(sat)      IC=1.5A,IB=150mA                                         1.2     V

 Transition frequency                              fT         VCE=5V,IC=1.5A                                 120              MHz

 Collector output capacitance                     Cob         VCB=10V,IE=0,f=1MHz                             30               pF

                             Turn on Time          ton                                                                 0.5

 Switching Time              Storage Time          tstg       VCC=10V,IC=1A,IB1=-IB2=-0.1A                             2.0     s

                             Fall Time              tf                                                                 0.5

 CLASSIFICATION OF            hFE(2)
 Rank                                       M                                          L                           K
 Range                                   100-200                                 160-320                       200-400
                           2SD1899-Z(NPN)
                          TO-251/TO-252-2L Transistor



Typical Characteristics
 2SD1899-Z(NPN)
TO-251/TO-252-2L Transistor

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