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                                                                                                     2SD2114
                                                                                                SOT-23 Transistor(NPN)


                                           1. BASE                                                        SOT-23
                                           2.EMITTER
                                           3.COLLECTOR



Features
          High DC current gain. hFE = 1200 (Typ.)
          High emitter-base voltage. VEBO =12V (Min.)
          Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

MARKING: BBV,BBW

MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                            Dimensions in inches and (millimeters)
        Symbol                 Parameter                   Value           Units
 VCBO               Collector-Base Voltage                      25             V
 VCEO               Collector-Emitter Voltage                   20             V
 VEBO               Emitter-Base Voltage                        12             V
 IC                 Collector Current -Continuous               0.5            A
 PC                 Collector Power Dissipation                0.25            W
 Tj                 Junction Temperature                       150             
 Tstg               Storage Temperature                   -55-150              



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                              Symbol             Test       conditions      MIN      TYP       MAX    UNIT
 Collector-base breakdown voltage                      V(BR)CBO       IC=10A,        IE=0           25                        V
 Collector-emitter breakdown voltage                   V(BR)CEO       IC =1mA, IB=0                 20                        V
 Emitter-base breakdown voltage                        V(BR)EBO       IE=10A, IC=0                  12                        V
 Collector cut-off current                               ICBO         VCB=20 V, IE=0                                  0.5    A
 Emitter cut-off current                                 IEBO         VEB=10V,IC=0                                    0.5    A
 DC current gain                                         hFE          VCE=3V, IC=10mA               820               2700
 Collector-emitter saturation voltage                  VCE(sat)       IC= 500mA, IB=20 mA                             0.4     V
                                                                      VCE=10V, IC=50mA
 Transition frequency                                     fT                                                 350             MHz
                                                                      f=100MHz
 output capacitance                                     Cob           VCB=10V,IE=0,f=1MHz                     8               pF
                                                                      Vin=0.1V(rms),IB=1mA,
 On resistance                                          R(on)                                                0.8              
                                                                      f=1KHZ


CLASSIFICATION OF            hFE


Rank                                                           V                                             W
Range                                                   820-1800                                          1200-2700
                              2SD2114
                          SOT-23 Transistor(NPN)


Typical characteristics
    2SD2114
SOT-23 Transistor(NPN)

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