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2SD965A
SOT-89 Transistor(NPN)
1. BASE
SOT-89
2. COLLECTOR
1
4.6
B
4.4
2 1.6
1.4
1.8
3. EMITTER 1.4
3
2.6 4.25
Features 2.4 3.75
0.8
Audio amplifier MIN
0.53
Flash unit of camera 0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
1.5
Switching circuit 3.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 750 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 7 V
Collector cut-off current ICBO VCB= 10V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=7V, IC=0 0.1 A
hFE(1) VCE= 2 V, IC=1mA 200
DC current gain hFE'(2) VCE= 2V, IC = 500mA 230 800
hFE(3) VCE= 2V, IC =2A 150
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V
Transition frequency fT VCE=6V, IC=50mA 150 MHz
Out capacitance Cob VCB=20 V , IE=0, f=1MHZ 50 pF
CLASSIFICATION OF hFE(2)
Rank Q R S
Range 230-380 340-600 560-800
2SD965A
SOT-89 Transistor(NPN)
Typical Characteristics
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