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3dd13003_to-126


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                                                                                                          3DD13003(NPN)
                                                                                                                  TO-126 Transistor


                                                                                                                             TO-126
                                                                   1.BASE

                                                                                                                                                         2.500
                                                                   2.COLLECTOR                                          7.400
                                                                                                                        7.800                      1.100 2.900
                                                                                                                                                  1.500

                                                                   3.EMITTER                                                              3.900
                                                                                                          3.000
                                                      3                                                                                   4.100
                                                                                                          3.200
                                                 2
                                                                                                10.60 0                                                          0.000
                                             1                                                  11.00 0                                                          0.300


Features
                                                                                                                                          2.100
                                                                                                                                          2.300
       power switching applications
                                                                                                                                  1.170
                                                                                                                                  1.370
MAXIMUM RATINGS (Ta=25 unless otherwise noted)                                                 15.30 0
                                                                                               15.70 0
Symbol                     Parameter                      Value          Units
VCBO           Collector-Base Voltage                        700             V
VCEO           Collector-Emitter Voltage                     400             V                                                    0.660
                                                                                                                                  0.860

VEBO           Emitter-Base Voltage                          9               V                                                                        0.450
                                                                                                                                                      0.600
                                                                                                                      2.290 TYP
IC             Collector Current -Continuous                 1.5             A                                           4.480
                                                                                                                        4.680
PC             Collector Power Dissipation                   1.5          W
TJ             Junction Temperature                          150                               Dimensions in inches and (millimeters)
Tstg           Storage Temperature                        -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                                              Test       conditions                  MIN                TYP          MAX              UNIT
                                                 Symbol
Collector-base breakdown voltage                 V(BR)CBO           IC =5mA, IE=0                             700                                                 V

Collector-emitter breakdown voltage              V(BR)CEO           IC=10mA, IB=0                             400                                                 V

Emitter-base breakdown voltage                   V(BR)EBO           IE=2mA, IC=0                                  9                                               V

Collector cut-off current                             ICBO          VCB=700V,IE=0                                                                 1              mA

Collector cut-off current                             ICEO          VCE=400V,IB=0                                                             0.5                mA

Emitter cut-off current                               IEBO          VEB=9V, IC=0                                                                  1              mA

                                                 hFE1               VCE=5V, IC= 0.5 A                             8                           40
DC current gain
                                                 hFE2               VCE=5V, IC= 1.5A                              5

Collector-emitter saturation voltage             VCE(sat)           IC=1A,IB=0.25A                                                            0.6                 V

Base-emitter saturation voltage                  VBE(sat)           IC=1A,IB=0.25A                                                            1.2                 V

Transition frequency                             fT                 VCE=10V,Ic=100mA, f =1MHz                     5                                              MHz

Fall time                                        tf                 IC=1A, IB1=-IB2=0.2A, VCC=100V                                            0.5                



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