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                                                                                                     3DD13003(NPN)
                                                                                                           TO-220 Transistor

                                                                                                                   TO-220
                                                           1. BASE

                                                           2. COLLECTOR

                                                           3. EMITTER
                                            3
                                        2
                                    1
Features
       power switching applications

MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol                     Parameter                        Value            Units
VCBO           Collector-Base Voltage                           700           V
VCEO           Collector-Emitter Voltage                        400           V
                                                                                                   Dimensions in inches and (millimeters)
VEBO           Emitter-Base Voltage                             9             V
IC             Collector Current -Continuous                    1.5           A
PC             Collector Power Dissipation                       2            W
TJ             Junction Temperature                             150           
Tstg           Storage Temperature                         -55-150            

ELECTRICAL CHARACTERISTICS (Tamb=25                                               unless     otherwise     specified)

               Parameter                                                 Test      conditions                MIN        TYP   MAX      UNIT
                                                    Symbol
Collector-base breakdown voltage                    V(BR)CBO           IC =5mA, IE=0                         700                        V

Collector-emitter breakdown voltage                 V(BR)CEO           IC=10mA, IB=0                         400                        V

Emitter-base breakdown voltage                      V(BR)EBO           IE=2mA, IC=0                           9                         V

Collector cut-off current                                ICBO          VCB=700V,IE=0                                           1       mA

Collector cut-off current                                ICEO          VCE=400V,IB=0                                          0.5      mA

Emitter cut-off current                                  IEBO          VEB=9V, IC=0                                            1       mA

                                                    hFE1               VCE=5V, IC= 0.5 A                      8               40
DC current gain
                                                    hFE2               VCE=5V, IC= 1.5A                       5

Collector-emitter saturation voltage                VCE(sat)           IC=1A,IB=0.25A                                         0.6       V

Base-emitter saturation voltage                     VBE(sat)           IC=1A,IB=0.25A                                         1.2       V

Transition frequency                                fT                 VCE=10V,Ic=100mA, f =1MHz              5                        MHz

Fall time                                           tf                 IC=1A, IB1=-IB2=0.2A, VCC=100V                         0.5       

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