Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors LGE 3dk2222a_sot-23

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.




Image preview - the first page of the document
3dk2222a_sot-23


>> Download 3dk2222a_sot-23 documenatation <<

Text preview - extract from the document
                                                                                                      3DK2222A
                                                                                            SOT-23 Transistor(NPN)


                                        1. BASE                                                        SOT-23
                                        2.EMITTER
                                        3.COLLECTOR



Features
       Epitaxial planar die construction
       Complementary PNP Type available(MMBT2907A)


MARKING: 1P1


MAXIMUM RATINGS (TA=25 unless otherwise noted)                                          Dimensions in inches and (millimeters)

Symbol                     Parameter                        Value          Units
VCBO          Collector-Base Voltage                        75              V
VCEO          Collector-Emitter Voltage                     40              V
VEBO          Emitter-Base Voltage                           6              V
IC            Collector Current -Continuous                600             mA
PC            Collector Power Dissipation                  225             mW
Tj            Junction Temperature                         150              
Tstg          Storage Temperature                       -55to+150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                        Symbol               Test   conditions         MIN       TYP      MAX     UNIT

 Collector-base breakdown voltage             V(BR)CBO         IC= 10A,      IE=0              75                         V
 Collector-emitter breakdown voltage          V(BR)CEO         IC= 10mA, IB=0                     40                      V
 Emitter-base breakdown voltage               V(BR)EBO         IE=10A, IC=0                       6                       V
 Collector cut-off current                        ICBO         VCB=70 V , IE=0                                   0.01    A
 Collector cut-off current                        ICEX         VCE=60V, VBE(off)=3V                              0.01    A
 Emitter cut-off current                          IEBO         VEB= 3V, IC=0                                     0.01    A
                                                  HFE(1)       VCE=10V, IC= 150mA            100                 300
 DC current gain                                  HFE(2)       VCE=10V, IC= 0.1mA            40
                                                  HFE(3)       VCE=10V, IC= 500mA            42
                                                                                                                0.6
                                                               IC=500 mA, IB= 50mA
 Collector-emitter saturation voltage         VCE(sat)                                                          0.3       V
                                                               IC=150 mA, IB=15mA

 Base-emitter saturation voltage              VBE(sat)         IC=500 mA, IB= 50mA                                1.2     V
                                                               VCE=20V, IC= 20mA
 Transition frequency                             fT           f=100MHz
                                                                                              300                        MHz

 Delay time                                            td      VCC=30V, VBE(off)=-0.5V                            10       nS
 Rise time                                             tr      IC=150mA , IB1= 15mA                               25       nS
 Storage time                                       tS         VCC=30V, IC=150mA                                  225      nS
 Fall time                                             tf      IB1=-IB2=15mA                                      60       nS
                             3DK2222A
                          SOT-23 Transistor(NPN)


Typical characteristics
   3DK2222A
SOT-23 Transistor(NPN)



◦ Jabse Service Manual Search 2024 ◦ Jabse PravopisonTap.bg ◦ Other service manual resources online : FixyaeServiceinfo