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>> Download mgsf3441 documenatation <<Text preview - extract from the documentMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TM
MGSF3441V
Motorola Preffered Device
Preliminary Information
Low rDS(on) Small-Signal MOSFETs P-CHANNEL
ENHANCEMENT-MODE
TMOS MOSFET
TMOS Single P-Channel rDS(0N) =78 m (TYP)
Field Effect Transistors
Y
TM
Part of the GreenLineTM Portfolio of devices with energy- DD
conserving traits. S
These miniature surface mount MOSFETs utilize
AR
1 2 5 6 DRAIN
Motorola's High Cell Density, HDTMOS process. Low DD
rDS(on) assures minimal power loss and conserves energy, G
making this device ideal for use in small power
management circuitry. Typical applications are dc-dc
CASE 318G-01, STYLE 1
converters, power management in portable and battery-
powered products such as computers, printers, PCMCIA TSOP 6 PLASTIC
v
cards, cellular and cordless telephones.
v
3
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