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2n2218_2n2219


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                                                                                   TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251

Devices                                                                                           Qualified Level
                                                                                                       JAN
2N2218                                        2N2219
                                                                                                     JANTX
2N2218A                                       2N2219A
                                                                                                    JANTXV
2N2218AL                                      2N2219AL
                                                                                                      JANS



MAXIMUM RATINGS
                                                          2N2218     2N2218A; L
                  Ratings                     Symbol                                 Unit
                                                          2N2219     2N2219A; L
 Collector-Emitter Voltage                     VCEO        30              50        Vdc
 Collector-Base Voltage                        VCBO        60              75        Vdc
 Emitter-Base Voltage                                      5.0             6.0       Vdc        TO- 39* (TO-205AD)
                                               VEBO
                                                                                                 2N2218, 2N2218A
 Collector Current                              IC                   800             mAdc
                                                                                                 2N2219, 2N2219A
 Total Power Dissipation    @ TA = +250C(1)                          0.8              W
                                                 PT
                            @ TC = +250C(2)                          3.0              W
 Operating & Storage Junction Temp. Range                                             0
                                              Top, Tstg          -55 to +200           C
THERMAL CHARACTERISTICS
                 Characteristics               Symbol               Max.             Unit
                                                                                     0
 Thermal Resistance, Junction-to-Case           RJC                  59              C/W                  TO-5*
1) Derate linearly 4.6 mW/0C above TA > +250C                                                        2N2218AL,
2) Derate linearly 17.0 mW/0C above TC > +250C                                                       2N2219AL
                                                                                                *See appendix A for
                                                                                                package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
                          Characteristics                                  Symbol        Min.      Max.         Unit
OFF CHARACTERISTICS
 Collector-Emitter Breakdown Voltage
  IE = 10 mAdc                           2N2218; 2N2219                  V(BR)CEO         30                     Vdc
                                         2N2218A; L; 2N2219A; L                           50
 Emitter-Base Cutoff Current
  VEB = 5.0 Vdc                          2N2218; 2N2219                                              10         



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