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TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices Qualified Level
JAN
2N3762 2N3763
2N3764 2N3765 JANTX
2N3762L 2N3763L
JANTXV
MAXIMUM RATINGS
2N3762* 2N3763*
Ratings Symbol Unit
2N3764 2N3765
Collector-Emitter Voltage VCEO 40 60 Vdc
Collector-Base Voltage VCBO 40 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc TO-39* (TO-205AD)
2N3762, 2N3763
Collector Current IC 1.5 Adc
2N3762* 1 2N3764 2
2N3763* 2N3765
Total Power Dissipation @ TA = +250C PT 1.0 0.5 W
0
Operating & Storage Junction Temp. Range Top, Tstg -55 to +200 C
TO-5*
THERMAL CHARACTERISTICS 2N3762L, 2N3763L
Characteristics Symbol Max. Unit
2N3762* 2N3764
2N3763* 2N3765
0
Thermal Resistance Junction-to-Case RJC 60 88 C/W
*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices TO-46* (TO-206AB)
1) Derate linearly at 5.71 mW/0C for TA > +250C 2N3764, 2N3765
2) Derate linearly at 2.86 mW/0C for TA > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N3762, 2N3764 V(BR)CEO 40 Vdc
2N3763, 2N3765 60
Collector-Base Cutoff Current
VCB = 20 Vdc 2N3762, 2N3764 100
100 Adc
VCB = 30 Vdc 2N3763, 2N3765 ICBO
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