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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices Qualified Level
JAN, JANTX
2N5660 2N5661 2N5662 2N5663
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5660 2N5661 Unit
2N5662 2N5663
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 250 400 Vdc
Collector-Emitter Voltage VCER 250 400 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 0.5 Adc TO-66*
Collector Current IC 2.0 Adc (TO-213AA)
2N5660 2N5662 2N5660, 2N5661
2N5661 2N5663
Total Power Dissipation @ TA = +250C 2.0(1) 1.0(2) W
PT
@ TC = +1000C 20 (3)
15(4) W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
2N5660 2N5662
Characteristics Symbol 2N5661 2N5663
Unit
Thermal Resistance, Junction-to-Case RJC 0
TO-5*
5.0 6.67 C/W
Junction-to-Ambient RJA
2N5662, 2N5663
87.5 145.8
1) Derate linearly 11.4 mW/0C for TA >+ 250C
2) Derate linearly 5.7 mW/0C for TA > +250C
3) Derate linearly 200 mW/0C for TC > +1000C
4) Derate linearly 150 mW/0C for TC > +1000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc 2N5660, 2N5662 V(BR)CEO 200 Vdc
2N5661, 2N5663 300
Collector-Base Breakdown Voltage
IC = 10 mAdc, RBE = 100 2N5660, 2N5662 V(BR)CER 250 Vdc
2N5661, 2N5663 400
Emitter-Base Breakdown Voltage 6.0
V(BR)EBO Vdc
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