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2n5664-65-66-67


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                                                                                TECHNICAL DATA

NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455

Devices                             Qualified Level          Devices                              Qualified Level
                                                                                                       JAN
                                         JAN
                                                             2N5666          2N5667                  JANTX
2N5664         2N5665                   JANTX
                                                             2N5666S         2N5667S                JANTXV
                                       JANTXV
                                                                                                      JANS



MAXIMUM RATINGS
                                                          2N5664    2N5665
                     Ratings                      Symbol 2N5666, S 2N5667, S Unit
Collector-Emitter Voltage                          VCEO         200             300     Vdc
Collector-Base Voltage                                          250             400     Vdc    TO-66* (TO-213AA)
                                                   VCBO
                                                                       6.0              Vdc
                                                                                                2N5664, 2N5665
Emitter-Base Voltage                               VEBO
Base Current                                        IB                 1.0              Adc
Collector Current                                   IC                 5.0              Adc
                                                              2N5664        2N5666, S
                                                              2N5665        2N5667, S
Total Power Dissipation           @ TA = +250C        PT       2.5 (1)        1.2 (2)   W            TO-5*
                                  @ TC = +1000C                30  (3)
                                                                              15 (4)    W        2N5666, 2N5667
                                                                                        0
Operating & Storage Junction Temperature Range    TJ, Tstg          -65 to +200          C
1) Derate linearly 14.3 mW/0C for TA > +250C
2) Derate linearly 6.9 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC >+1000C
4) Derate linearly 150 mW/0C for TC > +1000C
                                                                                               TO-39* (TO-205AD)
                                                                                                2N5666S, 2N5667S
                                                                                               *See appendix A for
                                                                                               package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
                            Characteristics                             Symbol          Min.      Max.         Unit
OFF CHARACTERISTICS
 Collector-Emitter Breakdown Voltage
  IC = 10 mAdc                                2N5664, 2N5666, S        V(BR)CER         250                     Vdc
                                              2N5665, 2N5667, S                         400
 Emitter-Base Breakdown Voltage
  IE = 10 



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