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>> Download 2n6274_2n6277 documenatation <<Text preview - extract from the document TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514
Devices Qualified Level
JAN
2N6274 2N6277 JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6274 2N6277 Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 120 180 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 20 Adc
Collector Current IC 50 Adc
Total Power Dissipation @ TC = +250C (1) PT 250 W
@ TC = +1000C (2) 143 W
0
Operating & Storage Junction Temperature Range Tj, Tstg -65 to +200 C
THERMAL CHARACTERISTICS TO-3*
Characteristics Symbol Max. Unit
0 (TO-204AA)
Thermal Resistance, Junction-to-Case RJC 0.7 C/W
1) Derate linearly 1.43 W/0C between TC = +250C and TC = +2000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc 2N6274 V(BR)CEO 100 Vdc
2N6277 150
Collector-Emitter Cutoff Current
VCE = 50 Vdc 2N6274 ICEO 50
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